smd type transistors www.kexin.com.cn 1 so t -363 unit: mm 1.3 +0.1 -0.1 0.65 0.525 1.25 +0.1 -0.1 0.36 0.1 +0.05 -0.02 0.1max 0.95 +0.05 -0.05 2.3 +0.15 -0.15 0.3 +0.1 -0.1 2.1 +0.1 -0.1 1e1 2b1 3c2 4e2 5b2 6c1 npn silicon af transistors array KC846S (bc846s) features for af input stage and driver applications high current gain. low collector-emitter saturation voltage. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 65 v emitter-base voltage v ebo 6v collector current (dc) i c 100 ma peak collector current i cm 200 ma power dissipation p d 250 mw junction temperature t j 150 storage temperature t stg -65to+150
www.kexin.com.cn 2 smd type diodes marking marking 1d KC846S (bc846s) electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector-base breakdown voltage v cbo i c =10 a, i e =0 80 v collector-emitter breakdown voltage v ceo i c =10ma,i b =0 65 v emitter-base breakdown voltage v ebo i e =10 a, i c =0 6v v cb =30v,i e =0 15 na v cb =30v,i e =0,t a =150 5 a i c =10 a, v ce =5v 250 i c =2ma,v ce = 5 v 200 290 450 i c =10ma,i b =0.5ma 90 250 i c =100ma,i b =5ma 200 650 i c =10ma,i b =0.5ma 700 i c =100ma,i b =5ma 900 i c =2ma,v ce = 5 v 580 660 700 i c =10ma,v ce =5v 770 collector-base capacitance c cb v cb =10v,f=1mhz 2 pf emitter-base capacitance c eb v eb =0.5v,f=1mhz 10 pf noise figure f i c =200 a, v ce =5v,r s =2k ,f = 1 khz, f = 200 hz 10 db transition frequency f t i c =20ma,v ce = 5 v, f = 100 mhz 250 mhz * pulse test: t < 300 s; d < 2% collector cutoff current i cbo v be(sat) base-emitter saturation voltage* base-emitter voltage* v be(on) dc current gain * h fe v ce(sat) collector-emitter saturation voltage* mv mv mv
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